kw.\*:("Crystal defects")
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Multiscale Modelling of Nano- and Micro-mechanics of MaterialsGHONIEM, Nasr M; BUSSO, Esteban P; HUANG, Hanchen et al.Philosophical magazine (2003. Print). 2003, Vol 83, Num 31-34, issn 1478-6435, 486 p.Conference Proceedings
Kinetics of isothermal annealing of vacancy voidsVITOL', E. N.Physics of metals and metallography. 1992, Vol 74, Num 2, pp 142-143, issn 0031-918XArticle
Twenty Five Years of Finnis-Sinclair Potentials and Related IssuesACKLAND, Graeme; SUTTON, Adrian; VITEK, Vasek et al.Philosophical magazine (2003. Print). 2009, Vol 89, Num 34-36, issn 1478-6435, 438 p.Serial Issue
Optical inhomogeneity and defect formation in Mg-doped lithium niobate single crystalsDERYUGINA, N. I; POLGAR, K; GABU, V. M et al.SPIE proceedings series. 1998, pp 558-560, isbn 0-8194-2808-6Conference Paper
Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25BAGRAEV, Nikolay T; EMTSEV, Vadim V; ESTREICHER, Stefan K et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, issn 0921-4526, 777 p.Conference Proceedings
Visualization of hydrogen location in pure vanadium using an imaging plate detectorSAITOH, H; MISAWA, T; NOYA, Y et al.Materials transactions - JIM. 1999, Vol 40, Num 7, pp 692-695, issn 0916-1821Article
Effects of structure microdefects on scintillation and photostimulated properties of CdWO4 crystalsBONDAR', V. G; BURACHAS, S. F; KATRUNOV, K. A et al.SPIE proceedings series. 1998, pp 530-533, isbn 0-8194-2808-6Conference Paper
Models of matter transport : Their verification and use for dilute systems with the aid of statistical theoriesALLNATT, A. R.Berichte der Bunsen-Gesellschaft. 1997, Vol 101, Num 9, pp 1303-1310, issn 0940-483XConference Paper
The geometry of uniformity in second-grade elasticityDE LEON, M; EPSTEIN, M.Acta mechanica. 1996, Vol 114, Num 1-4, pp 217-224, issn 0001-5970Article
Theory of nucleation with cluster loss and injection : Application to plastic deformation and irradiationRUSSELL, K. C.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 1996, Vol 27, Num 6, pp 1441-1448, issn 1073-5623Conference Paper
Collective behavior of dislocationsJI-FU KUNG; HONGYANG BAO; GALLIGAN, J. M et al.Scripta metallurgica et materialia. 1995, Vol 33, Num 2, pp 301-305, issn 0956-716XArticle
A system of planar faults in a crystal as an inteferometer for electrons, and correction of the model of scatteringSOFRONOVA, R. M.Physics of metals and metallography. 1995, Vol 79, Num 3, pp 304-309, issn 0031-918XArticle
Kinetic mechanisms for production of dislocation pile-upsMAREEVA, O. V; SARAFANOV, G. F; NAGORNYKH, S. N et al.Physics of metals and metallography. 1993, Vol 75, Num 6, pp 597-600, issn 0031-918XArticle
Celebrating tje Career of PAtrick VeyssièreSAADA, Georges; FOREST, Samuel.Philosophical magazine (2003. Print). 2013, Vol 93, Num 1-3, issn 1478-6435, 315 p.Serial Issue
Measured total cross sections of slow neutrons scattered by solid deuterium and implications for ultracold neutron sourcesATCHISON, F; BLAU, B; KOHLBRECHER, J et al.Physical review letters. 2005, Vol 95, Num 18, pp 182502.1-182502.4, issn 0031-9007Article
Radiation tolerance of complex oxidesSICKAFUS, K. E; MINERVINI, L; GRIMES, R. W et al.Science (Washington, D.C.). 2000, Vol 289, Num 5480, pp 748-751, issn 0036-8075Article
Bulk and interfacial energy densities for structured deformations of continuaCHOKSI, R; FONSECA, I.Archive for rational mechanics and analysis. 1997, Vol 138, Num 1, pp 37-103, issn 0003-9527Article
A theory of dislocation cell formation based on stochastic dislocation dynamicsHÄHNER, P.Acta materialia. 1996, Vol 44, Num 6, pp 2345-2352, issn 1359-6454Article
Quantum electrostatic solitons in degenerate semiconductors and semimetalsPAMYATNYKH, E. A; URSULOV, A. V.Physics of metals and metallography. 1995, Vol 80, Num 6, pp 596-599, issn 0031-918XArticle
Self-diffusion in silicon - Change of a paradigmSEEGER, Alfred.Physica status solidi. B. Basic research. 2011, Vol 248, Num 12, pp 2772-2774, issn 0370-1972, 3 p.Article
Imaging defects in metals with a positron re-emission microscopeCANTER, K; XIE, R.Materials chemistry and physics. 1998, Vol 52, Num 3, pp 221-227, issn 0254-0584Article
Critical stress for the escape of a group of dislocations from a partially pinned tilt boundaryKAMAT, S. V; HIRTH, J. P.Scripta metallurgica et materialia. 1995, Vol 32, Num 11, pp 1795-1800, issn 0956-716XArticle
Junction disclinations in plastically deformed crystalsRYBIN, V. V; ZISMAN, A. A; ZOLOTOREVSKY, N. YU et al.Acta metallurgica et materialia. 1993, Vol 41, Num 7, pp 2211-2217, issn 0956-7151Article
Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxyWANG, J. B; LI, Z. F; CHEN, P. P et al.Acta materialia. 2007, Vol 55, Num 1, pp 183-187, issn 1359-6454, 5 p.Article
Misfit dislocations in a hollow cylindrical film grown on a hole surfaceSHEINERMAN, A. G; GUTKIN, M. Yu.Scripta materialia. 2001, Vol 45, Num 1, pp 81-87, issn 1359-6462Article